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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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- Field emitter electrostatics: Efficient improved simulation technique for highly precise calculation of field enhancement factors. 41:022803. 2023-01-01
- In situ electron-beam-induced mechanical loading and fracture of suspended strained silicon nanowires. 41:024002. 2023-01-01
- Reaching homogeneous field emission current from clusters of emitters with nonuniform heights. 41:010601. 2023-01-01
- Behavior of the field enhancement due to mutual depolarization on a pair of triangular emitters at short and large separations. 40:012801. 2022-01-01
- About the robustness of Schottky conjecture when quasi-one-dimensional stages are present. 39:022802. 2021-01-01
- Determining the field enhancement factors of various field electron emitters with high numerical accuracy. 39:032801. 2021-01-01
- Interferometric III/V semiconductor dry-etch depth-control with ±0.8-nm best accuracy using a quadruple-Vernier-scale measurement. 39:052204. 2021-01-01
- Using static linear response theory to describe field emission field enhancement and a field-induced insulator-conductor transition. 39:060601. 2021-01-01
- Fabrication process of integrated inductors on flexible substrate for radio frequency and microwave applications. 38:023204. 2020-01-01
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