área de pesquisa
- "Estudo do comportamento de transistores de tunelamento induzido por efeito de campo (TFET) operando em diferentes temperaturas"
- Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures
- Comparison between Low-Dropout Voltage Regulators Designed with Line and Nanowire Tunnel Field Effect Transistors using Experimental Data
- Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C
- Dopagem elétrica de filmes de carbeto de silício (a-SiC:H) obtidos por PECVD
- Estudo de Transistores de Nanofolha de Silício com Porta ao Redor em Baixas Temperaturas.
- Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOSFET down to -100 oC
- Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C
- Light-assisted ozone gas-sensing performance of SnO2 nanoparticles: Experimental and theoretical insights
- Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs
- Luís Fernando da Silva
- PRODUÇÃO DE NOVOS FILMES PARA DETECÇÃO DE POLUENTES
- Signal to noise ratio in nanoscale bioFETs
- Trade-off analysis between gm/ID and fT of nanosheet NMOS transistors with different metal gate stack at high temperature